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| Final data SPN04N60C2 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V A * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * Improved noise immunity 3 2 1 VPS05163 Type SPN04N60C2 Package SOT-223 Ordering Code Q67040-S4308 Marking 04N60C2 G,1 D,2/4 S,3 Maximum Ratings, at TA = 25C, unless otherwise specified Parameter Continuous drain current TA = 25 C TA = 70 C Symbol ID Value 0.8 0.65 Unit A Pulsed drain current, tp limited by Tjmax Reverse diode dv/dt IS =0.8A, VDS < VDD , di/dt=100A/s, Tjmax=150C ID puls dv/dt VGS Ptot Tj , Tstg 3 6 20 1.8 -55... +150 V/ns V W C Gate source voltage Power dissipation, TA = 25C Operating and storage temperature Page 1 2002-07-29 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPN04N60C2 Symbol min. RthJS RthJA Tsold - Values typ. 20 110 0.05 max. 70 260 Unit K/W W/K C V(BR)DSS VGS(th) IDSS 600 3.5 4.5 5.5 V Gate threshold voltage, VGS = VDS ID =200A Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.1 0.8 0.95 1 50 100 0.95 nA Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=0.65A, Tj=25C Gate input resistance f = 1 MHz, open drain 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-29 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =0.8A, VGS =0 to 10V VDD =350V, ID =0.8A SPN04N60C2 Symbol Conditions min. Values typ. 1 600 325 15 20 35 10 30 60 30 max. - Unit g fs Ciss Coss Crss V DS2*I D*R DS(on)max, ID=0.65A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=380V, V GS=0/13V, ID=0.8A, RG=18, Tj=125C - ns - 4.1 9.2 17 7.5 - nC V(plateau) VDD =350V, ID =0.8A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-07-29 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0V, I F=IS V R=350V, I F=I S , diF/dt=100A/s SPN04N60C2 Symbol Conditions min. Values typ. 0.85 200 1.2 max. 0.8 3 1.05 - Unit IS ISM TA=25C - A V ns C Page 4 2002-07-29 Final data 1 Power dissipation Ptot = f (TA ) 1.9 SPN04N60C2 SPN04N60C2 2 Drain current ID = f (TA ) parameter: VGS 10 V 0.9 SPN04N60C2 W 1.6 A 0.7 1.4 0.6 Ptot ID 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 C 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA =25C 10 1 SPN04N60C2 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 SPN04N60C2 tp = 11.0s A = V D ( DS on ) /I D S K/W 10 0 R 100 s 10 1 1 ms 10 -1 Z thJA 10 0 D = 0.50 0.20 0.10 single pulse ID 10 ms 10 -2 10 -1 0.05 0.02 0.01 DC 10 -3 0 10 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 1 10 2 V 10 3 s 10 4 VDS Page 5 tp 2002-07-29 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 14 SPN04N60C2 6 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 8 A 20V 12V 10V 9.5V A 20V 12V 10V 9.5V 9V 8.5V 10 ID ID 8 9V 8V 4 8.5V 6 8V 7.5V 7V 4 7.5V 2 6.5V 6V 2 7V 6.5V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 7 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 5 8 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.65 A, VGS = 10 V 5.5 SPN04N60C2 4.5 R DS(on) RDS(on) 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 4 4 3.5 3 3.5 3 2.5 2 1.5 98% 1 0.5 8.5 0 -60 -20 20 60 100 C 2.5 2 typ 1.5 1 0 A ID 180 Tj Page 6 2002-07-29 Final data 9 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 16 SPN04N60C2 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 200 A 7 A V VGS(th) 12 5 ID 10 25 C 150 C max. 4 8 typ. 3 6 min. 2 4 1 2 0 0 2 4 6 8 10 12 14 16 V 20 VGS 0 -60 -20 20 60 100 C 180 Tj 11 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.8 A pulsed 16 SPN04N60C2 12 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 1 SPN04N60C2 V A 12 0,2 VDS max V GS 0,8 VDS max 10 0 10 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 4 2 0 0 4 8 12 16 20 nC 28 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 7 VSD 2002-07-29 Final data 13 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPN04N60C2 SPN04N60C2 14 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 720 V pF V(BR)DSS 680 660 640 620 10 3 Ciss C 10 2 Coss 600 10 1 580 560 540 -60 10 0 0 Crss -20 20 60 100 C 180 100 200 300 400 V 600 Tj VDS 15 Typ. Coss stored energy Eoss=f(VDS ) 3.5 J E oss 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 8 2002-07-29 Final data SPN04N60C2 Definition of diodes switching characteristics SOT223 A 6.5 0.2 3 0.1 0.1 max 1.6 0.1 B 7 0.3 15max 4 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 M B 3.5 0.2 +0.2 acc. to DIN 6784 Page 9 2002-07-29 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPN04N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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